Model-based proximity effect correction for electron-beam direct-write lithography

Chun-Hung Liu; Pei-Lin Tien; Philip C. W. Ng; Yu-Tian Shen; Kuen-Yu Tsai

doi:10.1117/12.846706

2 April 2010 Model-based proximity effect correction for electron-beam direct-write lithography

Chun-Hung Liu, Pei-Lin Tien, Philip C. W. Ng, Yu-Tian Shen, Kuen-Yu Tsai

Proceedings Volume 7637, Alternative Lithographic Technologies II; 76371V (2010) https://doi.org/10.1117/12.846706
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

A model-based proximity effect correction methodology is proposed and tested for electron-beam-direct-write lithography. It iteratively modulates layout geometry by feedback compensation until the correction error converges. The energy intensity distribution is efficiently calculated by fast convolving the modulated layout with a point-spread function which models electron beam shape and proximity effects primarily due to electron scattering in resist. The effectiveness of this methodology is measured by iteration numbers required for meeting the patterning fidelity specifications. It is examined versus process parameters including acceleration voltage and resist thickness with several regular mask geometries and practical design layouts.

Citation Download Citation

Chun-Hung Liu, Pei-Lin Tien, Philip C. W. Ng, Yu-Tian Shen, and Kuen-Yu Tsai "Model-based proximity effect correction for electron-beam direct-write lithography", Proc. SPIE 7637, Alternative Lithographic Technologies II, 76371V (2 April 2010); https://doi.org/10.1117/12.846706

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