Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

Tsuyoshi Toki; Pavel Izikson; Junichi Kosugi; Naruo Sakasai; Keiko Saotome; Kazuaki Suzuki; Daniel Kandel; John C. Robinson; Yuji Koyanagi

doi:10.1117/12.846413

10 March 2010 Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners

Tsuyoshi Toki, Pavel Izikson, Junichi Kosugi, Naruo Sakasai, Keiko Saotome, Kazuaki Suzuki, Daniel Kandel, John C. Robinson, Yuji Koyanagi

Author Affiliations +

Proceedings Volume 7640, Optical Microlithography XXIII; 764016 (2010) https://doi.org/10.1117/12.846413
Event: SPIE Advanced Lithography, 2010, San Jose, California, United States

Abstract

We have developed a new scheme of process control combining a CD metrology system and an exposure tool. A new model based on Neural Networks has been created in KLA-Tencor's "KT Analyzer" which calculates the dose and focus errors simultaneously from CD parameters, such as mid CD and height information, measured by a scatterometry (OCD) measurement tool. The accuracy of this new model was confirmed by experiment. Nikon's "CDU master" then calculated the control parameters for dose and focus per each field from the dose and focus error data of a reference wafer provided by KT Analyzer. Using the corrected parameters for dose and focus from CDU master, we exposed wafers on an NSR-S610C (ArF immersion scanner), and measured the CDU on a KLA SCD100 (OCD tool). As a result, we confirmed that CDU in the entire wafer can be improved more than 60% (from 3.36nm (3σ) to 1.28nm (3σ)).

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Tsuyoshi Toki, Pavel Izikson, Junichi Kosugi, Naruo Sakasai, Keiko Saotome, Kazuaki Suzuki, Daniel Kandel, John C. Robinson, and Yuji Koyanagi "Simultaneous optimization of dose and focus controls in advanced ArF immersion scanners", Proc. SPIE 7640, Optical Microlithography XXIII, 764016 (10 March 2010); https://doi.org/10.1117/12.846413

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