Paper
2 April 2010 The role of strong phase shift masks in Intel's DFM infrastructure development
Author Affiliations +
Abstract
Intel has reported on three separate styles and applications of strong phase shift masks (PSMs) over the last decade including alt-PSM for gate patterning, alt-PSM with assist features for contact patterning and Pixelated Phase Masks (PPMs) for metal layer patterning. Each had a prominent role in Intel's Design For Manufacturing (DFM) infrastructure development in terms of design rules and DFM tooling. By gradually inserting design rule changes for alt-PSM for gate patterning starting from the 130nm technology node, density and design impact were minimally effected. Alt-PSM for contact layer required development of complex methods of SRAF placement and coloring while also forcing advances in phase shift mask manufacturing infrastructure. Pixelated phase masks for metal patterning when combined with Inverse Lithography Techniques (ILTs) were successful in supporting a high level of flexibility for metal design rules including multiple feature sizes, pitches and two-dimension content.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard Schenker, Vivek Singh, and Yan Borodovsky "The role of strong phase shift masks in Intel's DFM infrastructure development", Proc. SPIE 7641, Design for Manufacturability through Design-Process Integration IV, 76410S (2 April 2010); https://doi.org/10.1117/12.849022
Lens.org Logo
CITATIONS
Cited by 6 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Optical lithography

Glasses

Design for manufacturing

Phase shifts

SRAF

Cadmium

RELATED CONTENT


Back to Top