Electroluminescence performance of organic light-emitting diode with molybdenum trioxide inside hole transport layer

Ye Zou; Zhenbo Deng; Zhaoyue Lü; Zheng Chen; Yuehong Yin; Hailiang Du; Yongsheng Wang

doi:10.1117/12.866038

22 October 2010 Electroluminescence performance of organic light-emitting diode with molybdenum trioxide inside hole transport layer

Ye Zou, Zhenbo Deng, Zhaoyue Lü, Zheng Chen, Yuehong Yin, Hailiang Du, Yongsheng Wang

Author Affiliations +

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76580S (2010) https://doi.org/10.1117/12.866038
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

A new structure of organic light-emitting diode (OLED) was fabricated by inserting a thin molybdenum trioxide (MoO₃) layer into hole transport layer (HTL) N,N'-diphenyl-N,N'-bis(1-napthyl-phenyl)-1,1'-biphenyl-4,4'-diamine (NPB). The device structure is ITO/NPB(10 nm)/MoO₃(3 nm)/NPB (30 nm)/tris-(8-hydroxyquinoline) aluminum (Alq₃) (60 nm)/LiF(0.5 nm)/Al. The control device is set without MoO₃ interlayer. The driving voltage at 100 cd/m² is only 4.87 V corresponding to the device with MoO₃ interlayer, which is much lower than the control device of 6.40 V. The novel device also shows higher power efficiency compared to the control device. The improvement of device performance is attributed to the Charge Transfer complex (CT complex), generated at the NPB/MoO₃/NPB interfaces, contributing here as hole transfer enhancer. Our finding additionally demonstrates the practical applicability of MoO₃ as a buffer layer in OLEDs.

Citation Download Citation

Ye Zou, Zhenbo Deng, Zhaoyue Lü, Zheng Chen, Yuehong Yin, Hailiang Du, and Yongsheng Wang "Electroluminescence performance of organic light-emitting diode with molybdenum trioxide inside hole transport layer", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76580S (22 October 2010); https://doi.org/10.1117/12.866038

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