Influence of doping I2 into MEH-PPV on carrier transporting capability and electroluminescence properties

Zhiming Cheng; Fujun Zhang

doi:10.1117/12.865953

22 October 2010 Influence of doping I₂ into MEH-PPV on carrier transporting capability and electroluminescence properties

Zhiming Cheng, Fujun Zhang

Author Affiliations +

Proceedings Volume 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology; 76584H (2010) https://doi.org/10.1117/12.865953
Event: 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies, 2010, Dalian, China

Abstract

The current-voltage characteristics and electroluminescence (EL) spectra were studied with different I₂ doping concentration in MEH-PPV based on single layer and double layer organic light emitting diodes (OLEDs). For the single layer devices, EL intensity and current was increased with the doping concentration under the same driving voltage. For the double layer devices, the charge carrier recombination zone was controlled by the different I₂ doping concentration compared to these devices without doping. The variation of EL spectra was discussed from the improvement of hole mobility in MEH-PPV layer induced by I₂ doping into it.

Citation Download Citation

Zhiming Cheng and Fujun Zhang "Influence of doping I₂ into MEH-PPV on carrier transporting capability and electroluminescence properties", Proc. SPIE 7658, 5th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Detector, Imager, Display, and Energy Conversion Technology, 76584H (22 October 2010); https://doi.org/10.1117/12.865953

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