Paper
28 July 2010 Small pixel a-Si/a-SiGe bolometer focal plane array technology at L-3 Communications
Charles M. Hanson, Sameer K. Ajmera, John Brady, Thomas Fagan, William McCardel, Diane Morgan, Tom Schimert, A. J. Syllaios, Michael F. Taylor
Author Affiliations +
Abstract
Recent developments in low-noise, high temperature coefficient of resistance (TCR) amorphous silicon and amorphous silicon germanium material have led to the development of uncooled focal plane arrays, with TCR in the range 3.2%/K to 3.9%/K, which has been leveraged in the small pixel FPA development at L-3 EOS. In the 17μm pixel technology node at present, 1024x768, 640×480, and 320x240 FPAs have thus far been developed. All three formats employ waferlevel vacuum packaging, with the 1024x768 representing the largest format uncooled FPA wafer-level packaged to date. FPA results from all three formats will be discussed and images will be presented.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles M. Hanson, Sameer K. Ajmera, John Brady, Thomas Fagan, William McCardel, Diane Morgan, Tom Schimert, A. J. Syllaios, and Michael F. Taylor "Small pixel a-Si/a-SiGe bolometer focal plane array technology at L-3 Communications", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76600R (28 July 2010); https://doi.org/10.1117/12.852511
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Cited by 11 scholarly publications.
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KEYWORDS
Staring arrays

Amorphous silicon

Capacitors

Digital filtering

Packaging

Sensors

Semiconducting wafers

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