Uncooled microbolometers with Ge[sub]x[/sub]Si[sub]1-x[/sub] thermo-sensing layer deposited by plasma with different device configurations

Mario Moreno; Alfonso Torres; Andrey Kosarev

doi:10.1117/12.853561

3 May 2010 Uncooled microbolometers with Ge_xSi_1-x thermo-sensing layer deposited by plasma with different device configurations

Mario Moreno, Alfonso Torres, Andrey Kosarev

Author Affiliations +

Proceedings Volume 7660, Infrared Technology and Applications XXXVI; 766014 (2010) https://doi.org/10.1117/12.853561
Event: SPIE Defense, Security, and Sensing, 2010, Orlando, Florida, United States

Abstract

In this work we report our results on the study of a-Ge_xSi_1-x intrinsic films used as thermo-sensing element in microbolometers. These intrinsic films are attractive because of their relatively high activation energy (Ea ≈ 0.37 eV) and consequently high temperature coefficient of resistance (TCR≈ -0.047 K^-1), and as well their higher room temperature conductivity (σRT ≈ 6x10-5 (Ωcm)-1), which is of around 3 - 4 orders of magnitude larger than that of the intrinsic a-Si:H films. Here we present a study of fabrication and performance characteristics of two different structures of microbolometers with a-Ge_xSi_1-x thermo-sensing films, labeled as planar and sandwich configurations. Metal electrodes were either planar providing current flow along the thermo-sensing layer or sandwich with current perpendicular to the thermosensing film surface. Current-voltage characteristics with and without IR illumination were performed and the responsivity of the devices was calculated. The noise spectra of the devices was studied, that allowed to determine the detectivity of the devices. The thermal response time was measured in the different microbolometer structures. These data are analyzed for the different micro-bolometer configurations and are compared with published data.

Citation Download Citation

Mario Moreno, Alfonso Torres, and Andrey Kosarev "Uncooled microbolometers with Ge_xSi_1-x thermo-sensing layer deposited by plasma with different device configurations", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 766014 (3 May 2010); https://doi.org/10.1117/12.853561

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