Paper
3 May 2010 Type-II superlattices: the Fraunhofer perspective
Robert Rehm, Martin Walther, Johannes Schmitz, Frank Rutz, Andreas Wörl, Ralf Scheibner, Johann Ziegler
Author Affiliations +
Abstract
In the past years, the development of the type-II InAs/GaSb superlattice technology at the Fraunhofer-Institute for Applied Solid State Physics (IAF) has been focused on achieving series-production readiness for third generation dualcolor superlattice detector arrays for the mid-wavelength infrared spectral range. The technology is ideally suited for airborne missile threat warning systems, due to its ability of low false alarm remote imaging of hot carbon dioxide signatures on a millisecond time scale. In a multi-wafer molecular beam epitaxy based process eleven 288×384 dualcolor detector arrays are fabricated on 3" GaSb substrates. Very homogeneous detector arrays with an excellent noise equivalent temperature difference have been realized. The current article presents the type-II superlattice dual-color technology developed at IAF and delivers insights into a range of test methodologies employed at various stages during the fabrication process, which ensure that the basic requirements for achieving high detector performance are met.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robert Rehm, Martin Walther, Johannes Schmitz, Frank Rutz, Andreas Wörl, Ralf Scheibner, and Johann Ziegler "Type-II superlattices: the Fraunhofer perspective", Proc. SPIE 7660, Infrared Technology and Applications XXXVI, 76601G (3 May 2010); https://doi.org/10.1117/12.850172
Lens.org Logo
CITATIONS
Cited by 17 scholarly publications and 1 patent.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Diodes

Gallium antimonide

Stereolithography

Sensors

Photodiodes

Detector arrays

Semiconducting wafers

Back to Top