Paper
18 May 2010 Electromagnetic propagation in multilayered nanomodified heavily doped Si:P systems
Z. T. Kuznicki, M. Basta
Author Affiliations +
Abstract
Investigation of some light-matter interactions in Multi-Interface Novel Devices (MIND) containing a nanoscale Si-layered system have led to a method for predicting free-carrier density dependent nonlinear optical properties as a function of doping, light excitation intensity and carrier injection. The approach is based on the well-known t-matrix approximation. A simplified a few-layer optical model has been constructed that will reproduce the main features/parameters of real systems. The degree of model and simulation self-consistency is discussed using basic physical functions and published experimental data. Near perfect agreement between the simulated model and the corresponding experimental results has been obtained. In this way, the simulation allowed us to determine the main origins/components of the strong optical nonlinearity characteristic of one of the most specific MIND behaviours.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Z. T. Kuznicki and M. Basta "Electromagnetic propagation in multilayered nanomodified heavily doped Si:P systems", Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251B (18 May 2010); https://doi.org/10.1117/12.856311
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KEYWORDS
Doping

Data modeling

Silica

Geometrical optics

Reflectivity

Systems modeling

Radio propagation

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