Schottky photodetector integration on LOCOS-defined SOI waveguides

Shuxia Li; N. Garry Tarr; Pierre Berini

doi:10.1117/12.873027

22 September 2010 Schottky photodetector integration on LOCOS-defined SOI waveguides

Shuxia Li, N. Garry Tarr, Pierre Berini

Proceedings Volume 7750, Photonics North 2010; 77501M (2010) https://doi.org/10.1117/12.873027
Event: Photonics North 2010, 2010, Niagara Falls, Canada

Abstract

Ni/nSi and Pt/nSi Schottky barrier diodes have been integrated with SOI optical waveguides produced using the Local Oxidation of Silicon (LOCOS) technique. The smooth, nearly planar topography provided by LOCOS allows the Schottky metal to overlap the waveguide rib while still giving low leakage current densities (<10^-5 Acm^-2 for Ni and <10^-7 Acm^-2 for Pt at 1 V reverse bias). Correcting for input coupling loss, responsivities of 4.7 mA/W and 4 μA/W were obtained for 500 μm long Ni and Pt diodes respectively at 1310 nm. At 1550 nm the responsivity for Ni was 1.8 mA/W while Pt did not give a measureable response.

Citation Download Citation

Shuxia Li, N. Garry Tarr, and Pierre Berini "Schottky photodetector integration on LOCOS-defined SOI waveguides", Proc. SPIE 7750, Photonics North 2010, 77501M (22 September 2010); https://doi.org/10.1117/12.873027

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