Band structure engineering of ZnO[sub]1-x[/sub]Se[sub]x[/sub] alloys

Marie A. Mayer; Derrick T. Speaks; Kin Man Yu; Samuel S. Mao; Eugene E. Haller; Wladek Walukiewicz

doi:10.1117/12.859482

24 August 2010 Band structure engineering of ZnO_1-xSe_x alloys

Marie A. Mayer, Derrick T. Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, Wladek Walukiewicz

Proceedings Volume 7770, Solar Hydrogen and Nanotechnology V; 77700C (2010) https://doi.org/10.1117/12.859482
Event: SPIE Solar Energy + Technology, 2010, San Diego, California, United States

Abstract

ZnO_1-xSe_x films have been prepared through pulsed laser deposition as a step toward stable films with a band gap appropriate for water splitting. The films show a clear red shift in absorption with increasing Se content and a shift in the flat band voltage toward spontaneity. Due to the films' electron affinities, there exists a natural tunnel junction between these n- ZnO_1-xSe_x films when grown on the p-side of a Si diode. The overall performance, emphasized by flat band potential measurements, can be improved by growing films on Si p-n diodes.

Citation Download Citation

Marie A. Mayer, Derrick T. Speaks, Kin Man Yu, Samuel S. Mao, Eugene E. Haller, and Wladek Walukiewicz "Band structure engineering of ZnO_1-xSe_x alloys", Proc. SPIE 7770, Solar Hydrogen and Nanotechnology V, 77700C (24 August 2010); https://doi.org/10.1117/12.859482

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