Paper
2 September 2010 Continued development of room temperature semiconductor nuclear detectors
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Abstract
Thallium bromide (TlBr) and related ternary compounds, TlBrI and TlBrCl, have been under development for room temperature gamma ray spectroscopy due to several promising properties. Due to recent advances in material processing, electron mobility-lifetime product of TlBr is close to Cd(Zn)Te's value which allowed us to fabricate large working detectors. We were also able to fabricate and obtain spectroscopic results from TlBr Capacitive Frisch Grid detector and orthogonal strip detectors. In this paper we report on our recent TlBr and related ternary detector results and preliminary results from Cinnabar (HgS) detectors.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hadong Kim, Leonard Cirignano, Alexei Churilov, Guido Ciampi, Alireza Kargar, William Higgins, Patrick O'Dougherty, Suyoung Kim, Michael R. Squillante, and Kanai Shah "Continued development of room temperature semiconductor nuclear detectors", Proc. SPIE 7806, Penetrating Radiation Systems and Applications XI, 780604 (2 September 2010); https://doi.org/10.1117/12.864147
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KEYWORDS
Sensors

Mercury

Semiconductors

Gamma radiation

Spectroscopy

Crystals

Amplifiers

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