Mid-infrared photonics in silicon

Alexander Spott; Yang Liu; Tom W. Baehr-Jones; Rob Ilic; Michael Hochberg

doi:10.1117/12.876097

21 February 2011 Mid-infrared photonics in silicon

Alexander Spott, Yang Liu, Tom W. Baehr-Jones, Rob Ilic, Michael Hochberg

Proceedings Volume 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X; 79171B (2011) https://doi.org/10.1117/12.876097
Event: SPIE LASE, 2011, San Francisco, California, United States

Abstract

Silicon waveguides have, to date, largely been designed to operate near the telecommunication bands in the near infrared. The mid-infrared (MIR) wavelengths, which range from two to twenty microns, are critical for a number of application areas, including chemical bond spectroscopy and thermal imaging. We show results, using commercially available silicon-on-sapphire wafers, for low-loss (4.0 dB/cm) waveguides and what we believe to be the first working microresonators operating at wavelengths around 5.5 um in silicon guides with Q-values as high as 3.0 k. This talk will discuss the applications for mid-infrared integrated photonics in the silicon system, particularly for sensing and nonlinear optics.

Citation Download Citation

Alexander Spott, Yang Liu, Tom W. Baehr-Jones, Rob Ilic, and Michael Hochberg "Mid-infrared photonics in silicon", Proc. SPIE 7917, Nonlinear Frequency Generation and Conversion: Materials, Devices, and Applications X, 79171B (21 February 2011); https://doi.org/10.1117/12.876097

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