Paper
21 February 2011 11 W single gain element dilute nitride disk laser emitting at 1180 nm
T. Leinonen, V.-M. Korpijärvi, Janne Puustinen, Ryan J. Epstein, M. Guina
Author Affiliations +
Abstract
We report a study investigating the power scaling properties of a single gain chip GaInNAs/GaAs semiconductor disk laser emitting around 1180 nm. The power scaling was done by varying the pump spot diameter between 320 μm and 460 μm. The emission efficiency was assessed for output coupling ratios between 0.1% and 3%. A maximum output power of 11 W was achieved with a 1.5 % output coupling ratio and a pump spot diameter of 390 μm. The heat from the active region was extracted by an intracavity diamond heat spreader attached to a water-cooled copper mount.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
T. Leinonen, V.-M. Korpijärvi, Janne Puustinen, Ryan J. Epstein, and M. Guina "11 W single gain element dilute nitride disk laser emitting at 1180 nm", Proc. SPIE 7919, Vertical External Cavity Surface Emitting Lasers (VECSELs), 791905 (21 February 2011); https://doi.org/10.1117/12.875318
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KEYWORDS
Mirrors

Quantum wells

Semiconductor lasers

Disk lasers

Diamond

Semiconductors

Second-harmonic generation

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