Advances in nano-enabled GaN photonic devices

W. N. Wang; P. A. Shields; C. Liu; D. W. E. Allsopp; F. Causa

doi:10.1117/12.871427

24 January 2011 Advances in nano-enabled GaN photonic devices

W. N. Wang, P. A. Shields, C. Liu, D. W. E. Allsopp, F. Causa

Proceedings Volume 7945, Quantum Sensing and Nanophotonic Devices VIII; 794523 (2011) https://doi.org/10.1117/12.871427
Event: SPIE OPTO, 2011, San Francisco, California, United States

Abstract

In this work, the results are presented of a nanorod LED array. If the lateral size of the nanorods is small enough, it is possible to achieve a degree of lateral confinement. If the nanorods are ordered into a suitable photonic lattice, then this will reduce the lateral spontaneous emission and enhance emission along the vertical axis via the Purcell effect. Additionally there is a degree of dislocation filtering that can occur [1]. However, one potential drawback of this device is the large free surface that borders the multi-quantum well active region. Nevertheless, it has been shown that the surface recombination in the nitride materials is the lowest of all III-V semiconductors. Results of SEM, PL, EL, and far field pattern are presented to compare the progressive effect of using photo-assisted electroless and wet etching [2]. It can be seen that over time the photo-assisted electroless method clearly delineates the active MQW region, possibly as a result of the different etch rate of InGaN. Alternatively, a purely chemical etching method was used. With a narrowing of the nanorods, there is a progressive blue shift of the photoluminescence peak. The optical image of the emission shows that there are well-defined lines of enhanced light propagation that match the symmetry of the nanorod array, thus showing there is a photonic crystal effect.

Citation Download Citation

W. N. Wang, P. A. Shields, C. Liu, D. W. E. Allsopp, and F. Causa "Advances in nano-enabled GaN photonic devices", Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 794523 (24 January 2011); https://doi.org/10.1117/12.871427

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