Millimeter Wave Monolithic GaAs Power FET Amplifiers

B. Kim; H. Q. Tserng; H. D. Shih

doi:10.1117/12.940961

2 February 1988 Millimeter Wave Monolithic GaAs Power FET Amplifiers

B. Kim, H. Q. Tserng, H. D. Shih

Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940961
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

Millimeter-wave monolithic GaAs power FETs with total gate widths of up to 400 pm and output powers up to 200 mW have been developed. These amplifiers were fabricated using sub-half-micrometer gate length FETs on MBE-grown epitaxial layers with n+ contact layers. A source overlay structure with via groundings has been used for the FET design. Power densities of 0.53 W/mm, 0.45 W/mm, and 0.25 W/mm were obtained at 34 GHz, 41 GHz, 54 GHz, respectively. Power-added efficiency of 33% was obtained at 35 GHz with 0.53 W/mm power density.

Citation Download Citation

B. Kim, H. Q. Tserng, and H. D. Shih "Millimeter Wave Monolithic GaAs Power FET Amplifiers", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940961

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