Paper
2 February 1988 Photoelectron Scanning Electron Microscope (PSEM) For High Speed Noncontact Testing
P. May, J. M. Halbout, G. Chiu
Author Affiliations +
Proceedings Volume 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits; (1988) https://doi.org/10.1117/12.940943
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States
Abstract
The electron emitter in a conventional SEM is replaced by a pulsed laser/photocathode combination, resulting in a source producing electron pulses of order 1 ps in duration at a 100 Mhz repetition rate and with a peak brightness of 3 10' A/cm2.steradian. By using this instrument in the voltage contrast mode, without contact with the samples, we have been able to measure electrical pulses propagating on coplanar transmission lines with a temporal resolution of 5 ps, a voltage resolution of 3 mV/(Hz)1/2 and a spatial resolution of 0.1 Am. These measurements are achieved with extraction fields above the sample of about 1 kV/mm.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. May, J. M. Halbout, and G. Chiu "Photoelectron Scanning Electron Microscope (PSEM) For High Speed Noncontact Testing", Proc. SPIE 0795, Characterization of Very High Speed Semiconductor Devices and Integrated Circuits, (2 February 1988); https://doi.org/10.1117/12.940943
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Cited by 8 scholarly publications.
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KEYWORDS
Picosecond phenomena

Temporal resolution

Scanning electron microscopy

Spatial resolution

Pulsed laser operation

Monte Carlo methods

Integrated circuits

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