Paper
7 April 2011 Impact of polymerization process on OOB on lithographic performance of a EUV resist
Vipul Jain, Suzanne M. Coley, Jung June Lee, Matthew D. Christianson, Daniel J. Arriola, Paul LaBeaume, Maria E. Danis, Nicolas Ortiz, Su-Jin Kang, Michael D. Wagner, Amy Kwok, David A. Valeri, James W. Thackeray
Author Affiliations +
Abstract
Several approaches have been used to minimize LWR in advanced resists. Various polymer and matrix properties, such as polymer molecular volume and free volume fraction, polymer dissolution, impact of activation energy of the deprotection reaction and distribution of small molecules in the polymer matrix have been shown to influence the functional behavior of the resist. We have developed polymerization methods to improve the incorporation and homogeneity of monomers, including PAG monomer, in an EUV resist polymer. Further, we report on use of a new cation which imparts reduced OOB character and a 30% improvement in LWR for a 28nm L/S feature with sensitivity of 10mJ/cm2 versus a control containing the TPS cation. Additionally this new material is capable of 21nm resolution. We also tested the new cation for outgassing by RGA and observed a 60% reduction in outgassing versus a TPS control.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vipul Jain, Suzanne M. Coley, Jung June Lee, Matthew D. Christianson, Daniel J. Arriola, Paul LaBeaume, Maria E. Danis, Nicolas Ortiz, Su-Jin Kang, Michael D. Wagner, Amy Kwok, David A. Valeri, and James W. Thackeray "Impact of polymerization process on OOB on lithographic performance of a EUV resist", Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796912 (7 April 2011); https://doi.org/10.1117/12.879487
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Cited by 7 scholarly publications and 1 patent.
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KEYWORDS
Polymers

Polymerization

Extreme ultraviolet

Line width roughness

Extreme ultraviolet lithography

Lithography

Spectroscopy

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