High Power AlGaAs/GaAs Single Quantum Well Lasers With Chemically Assisted Ion Beam Etched Mirrors

P. Tihanyi,; D. K. Wagner; A. J . Roza; H. J. Vollmer; C. M. Harding; R. J. Davis; E. D. Wolf

doi:10.1117/12.941051

22 April 1987 High Power AlGaAs/GaAs Single Quantum Well Lasers With Chemically Assisted Ion Beam Etched Mirrors

P. Tihanyi,, D. K. Wagner, A. J . Roza, H. J. Vollmer, C. M. Harding, R. J. Davis, E. D. Wolf

Proceedings Volume 0797, Advanced Processing of Semiconductor Devices; (1987) https://doi.org/10.1117/12.941051
Event: Advances in Semiconductors and Semiconductor Structures, 1987, Bay Point, FL, United States

Abstract

We report the use of chemically assisted ion beam etching (CAIBE) to form one mirror facet of GaAs/A1GaAs separate confinement single quantum well heterostructure lasers grown by metal-organic chemical vapor deposition (MOCVD). The other facet is formed by cleaving. Measurements of the light output from the etched, uncoated facets show that these devices are typically capable of a power output of 80 mW with a single-facet differential quantum efficiency of 32% pulsed (27% cw). This compares favorably with similar lasers which have both facets cleaved (40% pulsed and 40% cw). Threshold currents for the lasers (300 um long, 60 um stripe length) with one etched facet averaged 145 mA, and average catastrophic failure occurs at an average continuous power output of approximately 205 mW.

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P. Tihanyi,, D. K. Wagner, A. J . Roza, H. J. Vollmer, C. M. Harding, R. J. Davis, and E. D. Wolf "High Power AlGaAs/GaAs Single Quantum Well Lasers With Chemically Assisted Ion Beam Etched Mirrors", Proc. SPIE 0797, Advanced Processing of Semiconductor Devices, (22 April 1987); https://doi.org/10.1117/12.941051

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