Sub-nanometer line width and line profile measurement for CD-SEM calibration by using STEM

Kiyoshi Takamasu; Haruki Okitou; Satoru Takahashi; Mitsuru Konno; Osamu Inoue; Hiroki Kawada

doi:10.1117/12.879036

20 April 2011 Sub-nanometer line width and line profile measurement for CD-SEM calibration by using STEM

Kiyoshi Takamasu, Haruki Okitou, Satoru Takahashi, Mitsuru Konno, Osamu Inoue, Hiroki Kawada

Proceedings Volume 7971, Metrology, Inspection, and Process Control for Microlithography XXV; 797108 (2011) https://doi.org/10.1117/12.879036
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

The novel method of sub-nanometer accuracy (uncertainty) for the line width and line profile measurement using STEM (Scanning Transmission Electron Microscope) images is proposed to calibrate CD-SEM line width measurement. In accordance with the proposed method, the traceability and reference metrology of line width measurements are established using Si lattice structures. First, we define two interfaces of Si-SiO₂ and Si-Air. The interface of Si-SiO₂ is defined as the end of Si lattice structure, and the interface of SiO₂-Air is defined using image intensity of STEM image after metal coating. Second, an image magnification is calculated using 2D Fourier analysis of a STEM image. Third, the edge positions of the line are detected by Si lattice patterns and image intensity. Using the proposed method, the estimated accuracy less than 0.5 nm for the line width of 50 nm is established.

Citation Download Citation

Kiyoshi Takamasu, Haruki Okitou, Satoru Takahashi, Mitsuru Konno, Osamu Inoue, and Hiroki Kawada "Sub-nanometer line width and line profile measurement for CD-SEM calibration by using STEM", Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797108 (20 April 2011); https://doi.org/10.1117/12.879036

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