EUV negative-resist based on thiol-yne system

Masamitsu Shirai; Koichi Maki; Haruyuki Okamura; Koji Kaneyama; Toshiro Itani

doi:10.1117/12.879037

15 April 2011 EUV negative-resist based on thiol-yne system

Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, Koji Kaneyama, Toshiro Itani

Proceedings Volume 7972, Advances in Resist Materials and Processing Technology XXVIII; 79721E (2011) https://doi.org/10.1117/12.879037
Event: SPIE Advanced Lithography, 2011, San Jose, California, United States

Abstract

Non-conventional chemically amplified (CA) negative resist for EUV lithography was studied. We have designed negative-tone EUV resist based on thiol-yne stepwise radical reactions. OH groups of poly(4-hydroxystyrene) (PHS) were modified with functional units bearing C-C triple bond structure. Resist was formulated as a mixture of modified-PHS, multifunctional thiol compound, and photoradical generator. The present resist was developable with standard 2.38 wt% TMAH aq. solution. Photo-sensitivity of the resist was obtained on irradiation at 254 nm and 13.5 nm. The resist was highly sensitive to EUV exposure. The sensitivity and the contrast were affected by the structure of modified-PHS and process conditions.

Citation Download Citation

Masamitsu Shirai, Koichi Maki, Haruyuki Okamura, Koji Kaneyama, and Toshiro Itani "EUV negative-resist based on thiol-yne system", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79721E (15 April 2011); https://doi.org/10.1117/12.879037

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