Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering

Jianhua Ma; Yan Liang; Xiaojing Zhu; Jinchun Jiang; Shanli Wang; Niangjuan Yao; Junhao Chu

doi:10.1117/12.888246

18 February 2011 Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering

Jianhua Ma, Yan Liang, Xiaojing Zhu, Jinchun Jiang, Shanli Wang, Niangjuan Yao, Junhao Chu

Proceedings Volume 7995, Seventh International Conference on Thin Film Physics and Applications; 79951G (2011) https://doi.org/10.1117/12.888246
Event: Seventh International Conference on Thin Film Physics and Applications, 2010, Shanghai, China

Abstract

Mo doped ZnO thin films (ZnO:Mo, MZO) were prepared on quartz glass substrates by RF magnetron sputtering at the lower substrate temperatures (room temperature (RT) and 100°C). Their structural, electrical and optical properties were studied by X-ray diffractometry (XRD), four probe technique, Hall measurement, and UV-VIS-NIR spectrophotometer, respectively. XRD showed that the resultant films were wurtzite structure with c-axis preferential orientation. As the substrate temperatures increasing, the thickness of the film increased and the crystallinity became better. The resistivity of the films were 3.44x10^-3 Ω•cm and 3.31x10^-3 Ω•cm for the films deposited at RT and 100°C, respectively. The corresponding average transmittance in visible and near IR region (400-1100nm) was 81.7 % and 74.5 %, respectively. In addition, for the film deposited at 100°C, the refractive index (n) and band gap (Eg) were obtained by fitting the transmittance spectra and discussed.

Citation Download Citation

Jianhua Ma, Yan Liang, Xiaojing Zhu, Jinchun Jiang, Shanli Wang, Niangjuan Yao, and Junhao Chu "Preparation and properties of ZnO:Mo thin films deposited by RF magnetron sputtering", Proc. SPIE 7995, Seventh International Conference on Thin Film Physics and Applications, 79951G (18 February 2011); https://doi.org/10.1117/12.888246

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