Quantum well and quantum dot energy harvesting devices

Roger E. Welser; Ashok K. Sood; Oleg A. Laboutin; Louis J. Guido; Nibir K. Dhar; Priyalal S. Wijewarnasuriya

doi:10.1117/12.888128

17 May 2011 Quantum well and quantum dot energy harvesting devices

Roger E. Welser, Ashok K. Sood, Oleg A. Laboutin, Louis J. Guido, Nibir K. Dhar, Priyalal S. Wijewarnasuriya

Proceedings Volume 8035, Energy Harvesting and Storage: Materials, Devices, and Applications II; 80351C (2011) https://doi.org/10.1117/12.888128
Event: SPIE Defense, Security, and Sensing, 2011, Orlando, Florida, United States

Abstract

Quantum structured solar cells seek to harness a wide spectrum of photons at high voltages by embedding low energy-gap wells or dots within a high energy-gap matrix. Quantum well and quantum dot solar cells have the potential to deliver ultra-high power conversion efficiencies in single junction devices, efficiencies that in theory can approach 45% in un-concentrated sunlight over a wide range of environmental conditions. In this paper, we will briefly review the theoretical underpinnings of quantum well and quantum dot photovoltaic devices, and summarize recent experimental efforts developing quantum-structured solar cell devices. In a specific example, test devices utilizing radiation-hard, III-V nitride materials have been built using both bulk and multiple quantum well (MQW) structures. Photovoltaic devices with an InGaN MQW structure are shown to outperform devices employing a thicker, bulk InGaN layer. These results, along with the underlying theoretical foundations, suggest that quantum well and quantum dot structures can enhance the performance of photovoltaic devices for a variety of defense applications.

Citation Download Citation

Roger E. Welser, Ashok K. Sood, Oleg A. Laboutin, Louis J. Guido, Nibir K. Dhar, and Priyalal S. Wijewarnasuriya "Quantum well and quantum dot energy harvesting devices", Proc. SPIE 8035, Energy Harvesting and Storage: Materials, Devices, and Applications II, 80351C (17 May 2011); https://doi.org/10.1117/12.888128

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