Amorphous As-S-Se semiconductor thin films for holography and lithography

Vadims Kolbjonoks; Vjaceslavs Gerbreders; Janis Teteris; Andrejs Bulanovs

doi:10.1117/12.886837

11 May 2011 Amorphous As-S-Se semiconductor thin films for holography and lithography

Vadims Kolbjonoks, Vjaceslavs Gerbreders, Janis Teteris, Andrejs Bulanovs

Proceedings Volume 8074, Holography: Advances and Modern Trends II; 80740U (2011) https://doi.org/10.1117/12.886837
Event: SPIE Optics + Optoelectronics, 2011, Prague, Czech Republic

Abstract

Electron beam (EB) induced changes in thin films of the amorphous chalcogenide semiconductors As-S-Se have been studied. The experimental results on patterning of As-S-Se film surfaces by EB exposure and following chemical etching are presented. The possibilities of practical application of this material as resists for the production of relief holograms and diffractive optical elements (DOE) are discussed.

Citation Download Citation

Vadims Kolbjonoks, Vjaceslavs Gerbreders, Janis Teteris, and Andrejs Bulanovs "Amorphous As-S-Se semiconductor thin films for holography and lithography", Proc. SPIE 8074, Holography: Advances and Modern Trends II, 80740U (11 May 2011); https://doi.org/10.1117/12.886837

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