Paper
28 February 2012 A novel single-transistor APS and its comparison with 3T CMOS image sensor
Xin-Yan Liu, Xi Lin, Cheng-Wei Cao, Qing-Qing Sun, Paul-Chang Lin, Yi-Jun Bian, Cheng Xing, Peng-Fei Wang, David Wei Zhang
Author Affiliations +
Abstract
A novel single-transistor configuration active pixel image sensor (APS) has been investigated in this paper. This device can realize the functions of the conventional 3T CMOS image sensor. In this paper, the basic performances including transient simulation, potential changes, and read endurance of the 1T image sensor will be discussed. Different from the conventional 3T CMOS image sensor, holes are used as signal charges in the proposed device. Comparison with the conventional 3T APS will be discussed as well.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin-Yan Liu, Xi Lin, Cheng-Wei Cao, Qing-Qing Sun, Paul-Chang Lin, Yi-Jun Bian, Cheng Xing, Peng-Fei Wang, and David Wei Zhang "A novel single-transistor APS and its comparison with 3T CMOS image sensor", Proc. SPIE 8255, Physics and Simulation of Optoelectronic Devices XX, 82551S (28 February 2012); https://doi.org/10.1117/12.907186
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Cited by 6 scholarly publications.
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KEYWORDS
CMOS sensors

Image sensors

Electrodes

Transistors

Device simulation

Photodiodes

Scanning electron microscopy

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