Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz

Jeng-Wei Yu; Yuh-Renn Wu; Lung-Han Peng

doi:10.1117/12.912041

27 February 2012 Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz

Jeng-Wei Yu, Yuh-Renn Wu, Lung-Han Peng

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82620N (2012) https://doi.org/10.1117/12.912041
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We characterize the transport properties of [11^-20] GaN/Ga₂O₃ nanowire (NW)-MOSFET epitaxially grown on (0001) sapphire substrates. When passivated with 10nm-thick Ga₂O₃ on the {1^-10^-1 }_GaN triangular facets, the 50 nm-dia. Ga₂O₃/GaN NW-MOSFET with 50nm gate length exhibits a saturation current of 130 μA, transconductance of 64 μS, current on/off ratio of 10⁴, subthreshold swing of 100mV/dec, and unity current (power) gain bandwidth f_T (f_MAX) at 150 (180)GHz. Using a 3D diffusion and drift model analysis, we found that the short channel effect in a L_g=50nm Ga₂O₃/GaN NW-MOSFET at an aspect ratio of 5 was suppressed due to contribution from polarization-induced negative space charge of -2.8×10¹² cm² at the abrupt crystalline interface between GaN NW and sapphire. The superior DC transport properties and good RF response can be ascribed the to polarization-induced 2D electron gas (2DEG) density of 7× 10¹² cm² with mobility of 1000cm²/V-sec confined at the semi-polar {1^-10^-1} GaN/Ga₂O₃ interfaces.

Citation Download Citation

Jeng-Wei Yu, Yuh-Renn Wu, and Lung-Han Peng "Scaling of GaN single nanowire MOSFET with cut-off frequency 150GHz", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82620N (27 February 2012); https://doi.org/10.1117/12.912041

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