Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Guangyu Liu; Jing Zhang; Hongping Zhao; Nelson Tansu

doi:10.1117/12.909633

27 February 2012 Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion

Guangyu Liu, Jing Zhang, Hongping Zhao, Nelson Tansu

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82621F (2012) https://doi.org/10.1117/12.909633
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

The MOCVD growths and device characteristics of 500-nm emitting InGaN quantum well (QW) light-emitting diodes (LEDs) with the insertion of thin (~1 nm) AlInN barrier layers were investigated for efficiency droop suppression. Preliminary device characteristics of InGaN QW LEDs with thin AlInN barrier layers were also presented.

Citation Download Citation

Guangyu Liu, Jing Zhang, Hongping Zhao, and Nelson Tansu "Device characteristics of InGaN quantum well light-emitting diodes with AlInN thin barrier insertion", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621F (27 February 2012); https://doi.org/10.1117/12.909633

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