Planar technologies for SPAD arrays with improved performances

Angelo Gulinatti; Francesco Panzeri; Ivan Rech; Piera Maccagnani; Massimo Ghioni; Sergio Cova

doi:10.1117/12.908648

20 January 2012 Planar technologies for SPAD arrays with improved performances

Angelo Gulinatti, Francesco Panzeri, Ivan Rech, Piera Maccagnani, Massimo Ghioni, Sergio Cova

Proceedings Volume 8268, Quantum Sensing and Nanophotonic Devices IX; 82681D (2012) https://doi.org/10.1117/12.908648
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

In the last years many progresses have been made in the field of Silicon Single Photon Avalanche Diodes (SPAD) thanks to the improvements both in device design and in fabrication technology. For example, the use of custom fabrication processes has allowed a steadily improvement of SPAD performance in terms of active area diameter, Dark Count Rate (DCR), and Photon Detection Efficiency (PDE). Although a significant breakthrough has been achieved with the recent introduction of a new device structure capable of combining a good timing resolution with a remarkable PDE in the near infrared region, nevertheless there is still room for further improvements. In this paper we will discuss further modifications to the device structure enabling the fabrication of arrays with red enhanced photon detection efficiency.

Citation Download Citation

Angelo Gulinatti, Francesco Panzeri, Ivan Rech, Piera Maccagnani, Massimo Ghioni, and Sergio Cova "Planar technologies for SPAD arrays with improved performances", Proc. SPIE 8268, Quantum Sensing and Nanophotonic Devices IX, 82681D (20 January 2012); https://doi.org/10.1117/12.908648

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