Laser produced plasma EUV sources for device development and HVM

David C. Brandt; Igor V. Fomenkov; Michael J. Lercel; Bruno M. La Fontaine; David W. Myers; Daniel J. Brown; Alex I. Ershov; Richard L. Sandstrom; Alexander N. Bykanov; Georgiy O. Vaschenko; Norbert R. Böwering; Palash Das; Vladimir B. Fleurov; Kevin Zhang; Shailendra N. Srivastava; Imtiaz Ahmad; Chirag Rajyaguru; Silvia De Dea; Wayne J. Dunstan; Peter Baumgart; Toshi Ishihara; Rod D. Simmons; Robert N. Jacques; Robert A. Bergstedt; Peter I. Porshnev; Christian J. Wittak; Michael R. Woolston; Robert J. Rafac; Jonathan Grava; Alexander A. Schafgans; Yezheng Tao

doi:10.1117/12.916521

23 March 2012 Laser produced plasma EUV sources for device development and HVM

David C. Brandt, Igor V. Fomenkov, Michael J. Lercel, Bruno M. La Fontaine, David W. Myers, Daniel J. Brown, Alex I. Ershov, Richard L. Sandstrom, Alexander N. Bykanov, Georgiy O. Vaschenko, Norbert R. Böwering, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Silvia De Dea, Wayne J. Dunstan, Peter Baumgart, Toshi Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt, Peter I. Porshnev, Christian J. Wittak, Michael R. Woolston, Robert J. Rafac, Jonathan Grava, Alexander A. Schafgans, Yezheng Tao

Author Affiliations +

Proceedings Volume 8322, Extreme Ultraviolet (EUV) Lithography III; 83221I (2012) https://doi.org/10.1117/12.916521
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

Laser produced plasma (LPP) systems have been developed as the primary approach for the EUV scanner light source for optical imaging of circuit features at sub-22nm and beyond nodes on the ITRS roadmap. This paper provides a review of development progress and productization status for LPP extreme-ultra-violet (EUV) sources with performance goals targeted to meet specific requirements from leading scanner manufacturers. We present the latest results on exposure power generation, collection, and clean transmission of EUV through the intermediate focus. Semiconductor industry standards for reliability and source availability data are provided. We report on measurements taken using a 5sr normal incidence collector on a production system. The lifetime of the collector mirror is a critical parameter in the development of extreme ultra-violet LPP lithography sources. Deposition of target material as well as sputtering or implantation of incident particles can reduce the reflectivity of the mirror coating during exposure. Debris mitigation techniques are used to inhibit damage from occuring, the protection results of these techniques will be shown over multi-100's of hours.

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David C. Brandt, Igor V. Fomenkov, Michael J. Lercel, Bruno M. La Fontaine, David W. Myers, Daniel J. Brown, Alex I. Ershov, Richard L. Sandstrom, Alexander N. Bykanov, Georgiy O. Vaschenko, Norbert R. Böwering, Palash Das, Vladimir B. Fleurov, Kevin Zhang, Shailendra N. Srivastava, Imtiaz Ahmad, Chirag Rajyaguru, Silvia De Dea, Wayne J. Dunstan, Peter Baumgart, Toshi Ishihara, Rod D. Simmons, Robert N. Jacques, Robert A. Bergstedt, Peter I. Porshnev, Christian J. Wittak, Michael R. Woolston, Robert J. Rafac, Jonathan Grava, Alexander A. Schafgans, and Yezheng Tao "Laser produced plasma EUV sources for device development and HVM", Proc. SPIE 8322, Extreme Ultraviolet (EUV) Lithography III, 83221I (23 March 2012); https://doi.org/10.1117/12.916521

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