Reticle intensity-based critical dimension uniformity to improve efficiency for DOMA correction in a foundry

Kin Wai Tang; Teng Hwee Ng; Lei Huang; Susan Ng; Thomas Ku; Wee Teck Chia; Lin Chua; William Li; Aaron Chin; Aditya Dayal; Tom Vavul; Trent Hutchinson

doi:10.1117/12.916335

5 April 2012 Reticle intensity-based critical dimension uniformity to improve efficiency for DOMA correction in a foundry

Kin Wai Tang, Teng Hwee Ng, Lei Huang, Susan Ng, Thomas Ku, Wee Teck Chia, Lin Chua, William Li, Aaron Chin, Aditya Dayal, Tom Vavul, Trent Hutchinson

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Proceedings Volume 8324, Metrology, Inspection, and Process Control for Microlithography XXVI; 83242W (2012) https://doi.org/10.1117/12.916335
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

As transistor dimensions shrinks, the requirement for wafer critical dimensions control is becoming increasingly challenging. The intra-field critical dimension uniformity (CDU) of the features on the reticle is one of the many sources of wafer CD variation. In this paper, we study how the CDU on the reticle can be obtained by using the intensity information collected during reticle inspection (iCDU^TM) on the KLA-Tencor TeraScan reticle inspection tool. The collected CDU information of the reticle is then applied as an intra-field dose correction function to improve wafer intra-field CD uniformity. Using this method of extracting the reticle CDU from the intensity information allows for simple integration into a high-volume production environment and an improved capability for intra-field CDU correction without the need to expose any wafers for CD measurement nor any GDS design information. The ability to apply iCDU on prototype devices on first pass run can also accelerate device development.

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Kin Wai Tang, Teng Hwee Ng, Lei Huang, Susan Ng, Thomas Ku, Wee Teck Chia, Lin Chua, William Li, Aaron Chin, Aditya Dayal, Tom Vavul, and Trent Hutchinson "Reticle intensity-based critical dimension uniformity to improve efficiency for DOMA correction in a foundry", Proc. SPIE 8324, Metrology, Inspection, and Process Control for Microlithography XXVI, 83242W (5 April 2012); https://doi.org/10.1117/12.916335

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KEYWORDS

Reticles

Semiconducting wafers

Critical dimension metrology

Inspection

Scanners

Yield improvement

Scanning electron microscopy

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