Patterning enhancement techniques by reactive ion etch

Masanobu Honda; Koichi Yatsuda

doi:10.1117/12.920309

16 March 2012 Patterning enhancement techniques by reactive ion etch

Masanobu Honda, Koichi Yatsuda

Proceedings Volume 8328, Advanced Etch Technology for Nanopatterning; 832809 (2012) https://doi.org/10.1117/12.920309
Event: SPIE Advanced Lithography, 2012, San Jose, California, United States

Abstract

The root causes of issues in state-of-the-arts resist mask are low plasma tolerance in etch and resolution limit in lithography. This paper introduces patterning enhancement techniques (PETs) by reactive ion etch (RIE) that solve the above root causes. Plasma tolerance of resist is determined by the chemical structure of resin. We investigated a hybrid direct current (DC) / radio frequency (RF) RIE to enhance the plasma tolerance with several gas chemistries. The DC/RF hybrid RIE is a capacitive coupled plasma etcher with a superimposed DC voltage, which generates a ballistic electron beam. We clarified the mechanism of resist modification, which resulted in higher plasma tolerance^[1]. By applying an appropriate gas to DC superimposed (DCS) plasma, etch resistance and line width roughness (LWR) of resist were improved. On the other hand, RIE can patch resist mask. RIE does not only etch but also deposits polymer onto the sidewall with sedimentary type gases. In order to put the deposition technique by RIE in practical use, it is very important to select an appropriate gas chemistry, which can shrink CD and etch BARC. By applying this new technique, we successfully fabricated a 35-nm hole pattern with a minimum CD variation.

Citation Download Citation

Masanobu Honda and Koichi Yatsuda "Patterning enhancement techniques by reactive ion etch", Proc. SPIE 8328, Advanced Etch Technology for Nanopatterning, 832809 (16 March 2012); https://doi.org/10.1117/12.920309

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