25Gbit/s fully CMOS-compatible silicon modulator based on interleaved PN junctions

Xi Xiao; Yingtao Hu; Hao Xu; Xianyao Li; Kang Xiong; Zhiyong Li; Tao Chu; Yude Yu; Jinzhong Yu

doi:10.1117/12.920386

22 February 2012 25Gbit/s fully CMOS-compatible silicon modulator based on interleaved PN junctions

Xi Xiao, Yingtao Hu, Hao Xu, Xianyao Li, Kang Xiong, Zhiyong Li, Tao Chu, Yude Yu, Jinzhong Yu

Proceedings Volume 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration; 83330I (2012) https://doi.org/10.1117/12.920386
Event: Photonics and Optoelectronics Meetings 2011, 2011, Wuhan, China

Abstract

We present a kind of depletion-mode silicon modulators based on cascade interleaved PN junctions, which simultaneously provide high modulation efficiency and large modulation bandwidth. The interfaces of the PN junctions are vertical to the waveguide's propagation direction and tolerant with ± 150nm junction misalignment on the cost of little degradation on the modulation efficiency. The device was fabricated with standard 0.18μm CMOS process, and provides a VπLπ < 1V • cm and an intrinsic bandwidth 39GHz. Over 10GHz electro-optical modulation bandwidth of the device was experimentally obtained. High speed non-return-zero modulation with a bit rate up to 25Gbit/s was finally demonstrated.

Citation Download Citation

Xi Xiao, Yingtao Hu, Hao Xu, Xianyao Li, Kang Xiong, Zhiyong Li, Tao Chu, Yude Yu, and Jinzhong Yu "25Gbit/s fully CMOS-compatible silicon modulator based on interleaved PN junctions", Proc. SPIE 8333, Photonics and Optoelectronics Meetings (POEM) 2011: Optoelectronic Devices and Integration, 83330I (22 February 2012); https://doi.org/10.1117/12.920386

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