Paper
9 May 2012 Graphene-based field-effect transistor structures for terahertz applications
Author Affiliations +
Abstract
We propose Terahertz (THz) plasmonic devices based on linearly integrated FETs (LFETs) on Graphene. LFET structures are advantageous for (THz) detection since the coupling between the THz radiation and the plasma wave is strongly enhanced over the single gate devices and accordingly higher-order plasma resonances become possible. AlGaN/GaN heterostructure LFETs with their high sheet carrier concentration and high electron mobility are promising for plasmonic THz detection. Nevertheless, our numerical studies show that room temperature resonant absorption of THz radiation by the plasmons in AlGaN/GaN LFETs is very weak even if the integration density is sufficiently large. Our simulations also demonstrate that similar LFETs on Graphene, which has very large electron mobility, can resonantly absorb THz radiation up to 5th harmonic at room temperature. Additionally, we investigated LFETs with integrated cavities on Graphene. Such Periodic Cavity LFETs substantially enhance the quality factor of the resonant modes.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ahmad Abbas, Mustafa Karabiyik, and Nezih Pala "Graphene-based field-effect transistor structures for terahertz applications", Proc. SPIE 8363, Terahertz Physics, Devices, and Systems VI: Advanced Applications in Industry and Defense, 83630S (9 May 2012); https://doi.org/10.1117/12.919460
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Cited by 6 scholarly publications and 2 patents.
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KEYWORDS
Graphene

Terahertz radiation

Plasma

Absorption

Field effect transistors

Modulation

Plasmonics

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