SSRM and SCM study for doping concentration of THz QCL devices

Rudra S. Dhar; Dayan Ban

doi:10.1117/12.2000731

24 October 2012 SSRM and SCM study for doping concentration of THz QCL devices

Rudra S. Dhar, Dayan Ban

Proceedings Volume 8412, Photonics North 2012; 84121Z (2012) https://doi.org/10.1117/12.2000731
Event: Photonics North 2012, 2012, Montréal, Canada

Abstract

Two-dimensional (2D) dopant profiling of the active region of THz quantum cascade laser (QCL) devices has been achieved with atomic force microscopy (AFM). Scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM) are shown as the two promising AFM techniques for 2D dopant profiling and mapping of dopant concentration for the sub-nanometer regime devices.

Citation Download Citation

Rudra S. Dhar and Dayan Ban "SSRM and SCM study for doping concentration of THz QCL devices", Proc. SPIE 8412, Photonics North 2012, 84121Z (24 October 2012); https://doi.org/10.1117/12.2000731

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