Paper
15 October 2012 A monothically integrated dual-wavelength photodetector with a step-shaped Fabry-Pérot filter
Xinye Fan, Yongqing Huang, Xiaomin Ren, Xiaofeng Duan, Fuquan Hu, Qi Wang, Shiwei Cai
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Abstract
A novel long wavelength photodetector with dual-wavelength response has been designed and fabricated, which can be realized by a step-shaped Fabry-Perot (F-P) filter structure. By using low pressure metal organic chemical vapor deposition (LP-MOCVD), the step-shaped GaAs/AlGaAs distributed Bragg reflectors (DBR) and the InP PIN photodetector are grown on a GaAs substrate, and by employing a thin low temperature buffer layer, the high quality GaAs/InP heteroepitaxy is realized. The structure of the photodetector is optimized by theoretical simulation. This device has a dual-peak distance of 19nm (1558, 1577 nm). The peak quantum efficiency of 8.5% around 1558 nm and 8.6% around 1577 nm, the 3dB bandwidth of 16 GHz are simultaneously obtained.
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Xinye Fan, Yongqing Huang, Xiaomin Ren, Xiaofeng Duan, Fuquan Hu, Qi Wang, and Shiwei Cai "A monothically integrated dual-wavelength photodetector with a step-shaped Fabry-Pérot filter", Proc. SPIE 8419, 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices for Sensing, Imaging, and Solar Energy, 84191S (15 October 2012); https://doi.org/10.1117/12.973659
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KEYWORDS
Photodetectors

Gallium arsenide

Heteroepitaxy

Quantum efficiency

Optical instrument design

Metalorganic chemical vapor deposition

Distributed Bragg reflectors

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