Paper
15 October 2012 The impact of process-induced mechanical stress on multi-fingered device performance
Naushad Alam, S. Dasgupta, Bulusu Anand
Author Affiliations +
Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 854907 (2012) https://doi.org/10.1117/12.925972
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
This paper investigates the stress liner induced performance enhancement in multi-fingered devices. It is observed that the liner induced stress is not uniform in all the fingers and fingers located at the edges of multifingered devices have larger channel stress. As a result there is an unaccounted change in the drive current of fingers, sharing an active region, with the number of fingers in multi-fingered devices. It is observed that the average effective drive current in the fingers of seven fingered NMOSFET (PMOSFET) is ~4% (~17%) smaller than the single finger devices. We present a physically reasonable semi-empirical model relating average current and the number of fingers in a multi-fingered device. We show that using our model, one can predict the delay of an inverter with multi-fingered layout as a function of its number of device fingers.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Naushad Alam, S. Dasgupta, and Bulusu Anand "The impact of process-induced mechanical stress on multi-fingered device performance", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 854907 (15 October 2012); https://doi.org/10.1117/12.925972
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KEYWORDS
Instrument modeling

Field effect transistors

TCAD

Transistors

Device simulation

Silicon

Capacitance

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