NEGF analysis of double gate SiGe and GaAs tunnel FETs

Rahul Mishra; Bahniman Ghosh

doi:10.1117/12.927344

15 October 2012 NEGF analysis of double gate SiGe and GaAs tunnel FETs

Rahul Mishra, Bahniman Ghosh

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490C (2012) https://doi.org/10.1117/12.927344
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

In recent past extensive device simulation work has already been done on TFETs. Various ways have been suggested to model TFETs. In our paper we look at one such particular way to model these devices. The Non equilibrium green’s formalism has proved effective in modeling nano scale devices. We model complete SiGe and GaAs tunnel FET for the first time using the NEGF formalism, also taking acoustic phonon scattering into account. We analyze them on the grounds of I-V curve, I_on-I_off ration and subthreshold slope. The poisson equation and the equilibrium statistical mechanical equation has been solved by providing the potential profile.

Citation Download Citation

Rahul Mishra and Bahniman Ghosh "NEGF analysis of double gate SiGe and GaAs tunnel FETs", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490C (15 October 2012); https://doi.org/10.1117/12.927344

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available