Simulation studies on heterojunction and HIT solar cells

Kamlesh Patel; O. S. Panwar; Atul Bisht; Sreekumar C.; Sushil Kumar; C. M. S. Rauthan

doi:10.1117/12.927395

15 October 2012 Simulation studies on heterojunction and HIT solar cells

Kamlesh Patel, O. S. Panwar, Atul Bisht, Sreekumar C., Sushil Kumar, C. M. S. Rauthan

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85490E (2012) https://doi.org/10.1117/12.927395
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Heterojunction solar cells have shown a promising comparable efficiency with the advantage of lower fabrication cost compared to the crystalline solar cells. In this paper, an attempt has been made to simulate the heterojunction structure and HIT structure using AMPS-1D software by applying various approaches. The simulation parameters of these structures are varied for cell efficiency, quantum efficiency, charge carrier concentration and temperature stability to achieve higher efficiency. The final solar cell parameters have been achieved about 20% for heterojunction and 23% for HIT cells. The effects on intrinsic and extrinsic characteristics of doped layers are discussed for these efficiencies.

Citation Download Citation

Kamlesh Patel, O. S. Panwar, Atul Bisht, Sreekumar C., Sushil Kumar, and C. M. S. Rauthan "Simulation studies on heterojunction and HIT solar cells", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85490E (15 October 2012); https://doi.org/10.1117/12.927395

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KEYWORDS

Heterojunctions

Solar cells

Amorphous silicon

Quantum efficiency

Photons

Interfaces

Absorption

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