Paper
15 October 2012 Study of energy eigenvalues and density of states of carriers in a triangular quantum wire
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Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491Q (2012) https://doi.org/10.1117/12.924994
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India
Abstract
Energy eigenvalues and density of states of carriers in a finite barrier triangular quantum wire embedded inside a rectangular quantum wire are numerically investigated using finite difference technique (FD-Q). Time-independent Schrödinger’s equation is solved with appropriate boundary conditions for computation of lowest three eigenstates. The wire is made of lower bandgap GaAs material surrounded by wider bandgap AlxGa1-xAs, and the analysis is carried out by taking into consideration of the conduction band discontinuity and effective mass mismatch at the boundaries. The eigenvalues and the density of states are plotted as function of wire dimension and mole fraction (x). The results are also compared with those obtained using rectangular quantum wire.
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Arpan Deyasi, S. Bhattacharyya, and N. R. Das "Study of energy eigenvalues and density of states of carriers in a triangular quantum wire", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491Q (15 October 2012); https://doi.org/10.1117/12.924994
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KEYWORDS
Aluminum

Nanostructures

Quantum computing

Semiconductors

Chemical elements

Gallium arsenide

Lithium

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