Surface charging of Silicon dioxide & Aluminum oxide structures

Abhishek Rathi; Bjoern Martin

doi:10.1117/12.926798

15 October 2012 Surface charging of silicon dioxide and aluminum dioxide structures

Abhishek Rathi, Bjoern Martin

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85491Y (2012) https://doi.org/10.1117/12.926798
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

The well-known technique of insulator surface charging is performed here with a tip of a cantilever. The feasibility to prepare a surface charge memory device is discussed. Since the charging of high resistive insulator surfaces can be performed approximately without power consumption and the surface charging is a promising method to build memory devices in integrated electronic circuits. To this aim the surface of silicon dioxide (SiO₂) is charged with the tip of an atomic force microscope (AFM) for different charging voltage, different charging time and different thickness of the sample in contact mode. Afterwards, the charged surface is inspected with the same tip operated in the Kelvin mode. With the Kelvin option of the AFM the surface potential and topography of the samples can be measured simultaneously. Furthermore, a time dependent spread and an exponential-like decay of the surface potential with a time constant of about 15 h are observed . Due to this long-term stability and the possibility to reverse the sign of the deposited charge by recharging in opposite direction it is thinkable to use the system as a surface charge memory device. Additionally, surface potential measurements are performed on aluminum dioxide (Al₂O₃) samples.

Citation Download Citation

Abhishek Rathi and Bjoern Martin "Surface charging of silicon dioxide and aluminum dioxide structures", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85491Y (15 October 2012); https://doi.org/10.1117/12.926798

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