Laser-doped selective emitters for photovoltaic applications

J. Woolridge; E. Reutzel; S. Ashok; L. Zou

doi:10.1117/12.927446

15 October 2012 Laser-doped selective emitters for photovoltaic applications

J. Woolridge, E. Reutzel, S. Ashok, L. Zou

Proceedings Volume 8549, 16th International Workshop on Physics of Semiconductor Devices; 85493H (2012) https://doi.org/10.1117/12.927446
Event: 16th International Workshop on Physics of Semiconductor Devices, 2011, Kanpur, India

Abstract

Use of selective emitters is an important step in increasing the efficiency of commercial crystalline Si solar cells, but costs must be kept under control. Laser doping allows selective doping of precisely defined regions without the need for process- and labor-intensive photolithography steps while maintaining or improving cell quality. Laser processing parameters must be investigated to optimize doping and minimize defect generation and contact resistance to realize optimal photovoltaic performance. Lasers are available in a wide range of wavelengths, pulse durations, fluences, and energy distributions. Processing parameters must be selected with both performance and industrial feasibility in mind.

Citation Download Citation

J. Woolridge, E. Reutzel, S. Ashok, and L. Zou "Laser-doped selective emitters for photovoltaic applications", Proc. SPIE 8549, 16th International Workshop on Physics of Semiconductor Devices, 85493H (15 October 2012); https://doi.org/10.1117/12.927446

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