InGaAsP optical device integration on SOI platform by Ar/O2 plasma assisted bonding

A. Higo; L. Li; E. Higurashi; M. Sugiyama; Y. Nakano

doi:10.1117/12.2008337

13 March 2013 InGaAsP optical device integration on SOI platform by Ar/O₂ plasma assisted bonding

A. Higo, L. Li, E. Higurashi, M. Sugiyama, Y. Nakano

Proceedings Volume 8616, MOEMS and Miniaturized Systems XII; 86160X (2013) https://doi.org/10.1117/12.2008337
Event: SPIE MOEMS-MEMS, 2013, San Francisco, California, United States

Abstract

The hetero-integration of InGaAsP/InP on highly doped silicon micro wire structure for Si hybrid laser using the plasma assisted direct bonding has been carried out. For strong adhesion, bonding assisted pattern was used for the silicon wire to the InGaAsP/InP layers. The I-V characteristics of the highly doped silicon micro wire to InP/InGaAsP layers are measured and compared to the Si/InP bulk bonding. The improvement of the heterointegration with long time annealing was also discussed and realized the direct current injection from Si wire platforms to compound semiconductor active layer for silicon hybrid laser.

Citation Download Citation

A. Higo, L. Li, E. Higurashi, M. Sugiyama, and Y. Nakano "InGaAsP optical device integration on SOI platform by Ar/O₂ plasma assisted bonding", Proc. SPIE 8616, MOEMS and Miniaturized Systems XII, 86160X (13 March 2013); https://doi.org/10.1117/12.2008337

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