Growth And Characterization Of CdxHgl-xTte For Optical Communications

A Lusson; R Legros; Y Marfaing; R Triboulet; A Tromson-Carli

doi:10.1117/12.943587

1 January 1987 Growth And Characterization Of CdxHgl-xTte For Optical Communications

A Lusson, R Legros, Y Marfaing, R Triboulet, A Tromson-Carli

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943587
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

CdxHg1_xTe layers have been grown by Liquid Phase Epitaxy in a wide composition range (0.5 < x < 1), covering the alloys adapted to detection at the optical communication wave-lengths (1.3 - 2.5 μm). Layers of thickness ranging from 2 to 20 μm and with high structural quality and composition uniformity are obtained thanks to a new determination of the phase diagram. Electrical measurements and exciton photoluminescence spectra confirm the general improvement reached for LPE layers compared to bulk crystals.

Citation Download Citation

A Lusson, R Legros, Y Marfaing, R Triboulet, and A Tromson-Carli "Growth And Characterization Of CdxHgl-xTte For Optical Communications", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943587

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