Growth Of InP And GaInAsP By MBE Using Gas Sources

L Goldstein

doi:10.1117/12.943570

1 January 1987 Growth Of InP And GaInAsP By MBE Using Gas Sources

L Goldstein

Proceedings Volume 0866, Materials and Technologies for Optical Communications; (1987) https://doi.org/10.1117/12.943570
Event: 1987 Symposium on the Technologies for Optoelectronics, 1987, Cannes, France

Abstract

The growth of InP and GaInAsP by Molecular Beam Epitaxy has been highly improved by the use of gas sources : hydrides sources (GSMBE) and metalorganic sources (MOMBE or CBE). High purity materials, heterostructures with low threshold current density (1 kA/cm2), quantum wells with sharp interfaces have been grown either by GSMBE or by MOMBE. These techniques which offer many advantages as compared to other epitaxial techniques, especially regarding the compositional homogeneity, appear very promising for high yield production of high performance components and optoelectronic and microelectronic IC's.

Citation Download Citation

L Goldstein "Growth Of InP And GaInAsP By MBE Using Gas Sources", Proc. SPIE 0866, Materials and Technologies for Optical Communications, (1 January 1987); https://doi.org/10.1117/12.943570

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available