Resist outgassing contamination growth results using both photon and electron exposures

Gregory Denbeaux; Yudhishthir Kandel; Genevieve Kane; Diego Alvardo; Mihir Upadhyaya; Yashdeep Khopkar; Alexander Friz; Karen Petrillo; Jaewoong Sohn; Chandra Sarma; Dominic Ashworth

doi:10.1117/12.2011606

1 April 2013 Resist outgassing contamination growth results using both photon and electron exposures

Gregory Denbeaux, Yudhishthir Kandel, Genevieve Kane, Diego Alvardo, Mihir Upadhyaya, Yashdeep Khopkar, Alexander Friz, Karen Petrillo, Jaewoong Sohn, Chandra Sarma, Dominic Ashworth

Author Affiliations +

Proceedings Volume 8679, Extreme Ultraviolet (EUV) Lithography IV; 86790L (2013) https://doi.org/10.1117/12.2011606
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

During exposure in an EUV scanner, photoresist and other materials coated on a wafer are known to outgas various species. As a requirement to pattern materials in an ASML NXE scanner, these materials need to be screened for outgassing and possible optics contamination. As part of the testing process, a resist-coated wafer is exposed in a vacuum chamber mimicking the conditions inside an EUV scanner. The resist exposure source can be either EUV photons or electron beam (e-beam). This presentation will cover the results to date on a SEMATECH program to study resist outgassing from both the commercial system from EUV Tech and a custom Resist Outgassing and Exposure (ROX) tool. The EUV Tech results reported will be based on electron exposures of the photoresist, and the ROX results reported will be based on EUV photon exposures of the photoresist. The results reported will cover both tools and the measurements of over 80 commercial photoresists.

Citation Download Citation

Gregory Denbeaux, Yudhishthir Kandel, Genevieve Kane, Diego Alvardo, Mihir Upadhyaya, Yashdeep Khopkar, Alexander Friz, Karen Petrillo, Jaewoong Sohn, Chandra Sarma, and Dominic Ashworth "Resist outgassing contamination growth results using both photon and electron exposures", Proc. SPIE 8679, Extreme Ultraviolet (EUV) Lithography IV, 86790L (1 April 2013); https://doi.org/10.1117/12.2011606

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