Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy

D. Hanzii; E. Kelm; N. Luapunov; R. Milovanov; G. Molodcova; M. Yanul; D. Zubov

doi:10.1117/12.2017156

8 January 2013 Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy

D. Hanzii, E. Kelm, N. Luapunov, R. Milovanov, G. Molodcova, M. Yanul, D. Zubov

Proceedings Volume 8700, International Conference Micro- and Nano-Electronics 2012; 87000V (2013) https://doi.org/10.1117/12.2017156
Event: International Conference on Micro-and Nano-Electronics 2012, 2012, Zvenlgorod, Russian Federation

Abstract

During a failure analysis of integrated circuits, containing non-volatile memory, it is often necessary to determine its contents while Standard memory reading procedures are not applicable. This article considers how the state of NVM cells with floating gate can be determined using scanning probe microscopy. Samples preparation and measuring procedure are described with the example of Microchip microcontrollers with the EPROM memory (PIC12C508) and flash-EEPROM memory (PIC16F876A).

Citation Download Citation

D. Hanzii, E. Kelm, N. Luapunov, R. Milovanov, G. Molodcova, M. Yanul, and D. Zubov "Determining the state of non-volatile memory cells with floating gate using scanning probe microscopy", Proc. SPIE 8700, International Conference Micro- and Nano-Electronics 2012, 87000V (8 January 2013); https://doi.org/10.1117/12.2017156

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