EUV scanner throughput considerations for the higher mask magnification

Kiwamu Takehisa

doi:10.1117/12.2025362

28 June 2013 EUV scanner throughput considerations for the higher mask magnification

Kiwamu Takehisa

Proceedings Volume 8701, Photomask and Next-Generation Lithography Mask Technology XX; 87010T (2013) https://doi.org/10.1117/12.2025362
Event: Photomask and NGL Mask Technology XX, 2013, Yokohama, Japan

Abstract

EUVL scanner throughputs are calculated considering a higher mask magnification. The calculation results show that the throughput of 8X mask system is 60-70% of that of 4X mask system. However the relative throughput compared to the 4X is higher if the duty cycle is considered as the input EUV power. The throughput is also estimated considering a 450mm wafer. Additionally the throughput for a twin reticle stage system using two 8X 6” masks is estimated for the case of stitching exposure.

Citation Download Citation

Kiwamu Takehisa "EUV scanner throughput considerations for the higher mask magnification", Proc. SPIE 8701, Photomask and Next-Generation Lithography Mask Technology XX, 87010T (28 June 2013); https://doi.org/10.1117/12.2025362

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