Reactive magnetron sputtering technique using O2/Ar gas mixture was used to deposit Gd2O3 layers. Following
metallization process of Al allowed to create MIS structures, which electrical parameters (κ, Dit, UFB, ρ, etc.) were
measured using high frequency C-V equipment. Created layers exhibit high permittivity (κ≈12) at 100kHz. I-V
measurements point out on maximum electric break down field Ebr≈0.4 MV/cm and maximum break down voltage Ubr ≈
16V. Layers were morphologically tested using AFM technique (Ra ≈ 0.5÷2nm). Layer thicknesses as well as refractive
indexes (RI ≈ 1.50÷2.05) were estimated using ellipsometry measurements.
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