Characterization and optimization of the stacked–PN junction photodiodes structure for energy harvesting CMOS image sensor

Chen Shi; Chao Liu; Qi Zhang; Li Tian; Hui Wang; Songlin Feng

doi:10.1117/12.2032371

21 August 2013 Characterization and optimization of the stacked–PN junction photodiodes structure for energy harvesting CMOS image sensor

Chen Shi, Chao Liu, Qi Zhang, Li Tian, Hui Wang, Songlin Feng

Author Affiliations +

Proceedings Volume 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications; 89080G (2013) https://doi.org/10.1117/12.2032371
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

The characterization and optimization of the stacked-PN junction photodiodes structure for energy harvesting CMOS image sensor is presented. The proposed structure has three desired PN junctions located along a vertical line. With proper connection, these PN junctions can provide high voltage or large current for the different load conditions. They also improve the energy harvesting efficiency compared with the conventional single PN junction. Theoretical analysis and optimizations of this structure are given in the paper as well as the simulation results.

Citation Download Citation

Chen Shi, Chao Liu, Qi Zhang, Li Tian, Hui Wang, and Songlin Feng "Characterization and optimization of the stacked–PN junction photodiodes structure for energy harvesting CMOS image sensor", Proc. SPIE 8908, International Symposium on Photoelectronic Detection and Imaging 2013: Imaging Sensors and Applications, 89080G (21 August 2013); https://doi.org/10.1117/12.2032371

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