Light control terahertz modulator based on the semiconductor material

Hailin Cui; Lei Jiao; Qingli Zhou; Lijuan Li

doi:10.1117/12.2034912

23 August 2013 Light control terahertz modulator based on the semiconductor material

Hailin Cui, Lei Jiao, Qingli Zhou, Lijuan Li

Proceedings Volume 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications; 890919 (2013) https://doi.org/10.1117/12.2034912
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

We have demonstrated a light control terahertz modulation system based on the semiconductor material, the system is composed of a commercial 850nm 10Gbps light source and a continuous THz source. The semiconductor device is the epitaxial growth Si layer on Si substrate wafer. When the 850nm light and continuous terahertz waves incident simultaneously to this semiconductor wafer, the modulated light can excite photogenerated carriers. And the carrier determines the absorption of terahertz waves, so the amplitude of output terahertz waves will be modulated. The tested modulation depth is 35%. The semiconductor material carriers lifetime determines both the modulation depth and modulation speed. So the carrier lifetime should be trade off considered. The modulation speed has been theoretical calculated and experimental tested. The carriers lifetime is tested about 2ns, and the modulation speed is calculated beyond gigabit per second.

Citation Download Citation

Hailin Cui, Lei Jiao, Qingli Zhou, and Lijuan Li "Light control terahertz modulator based on the semiconductor material", Proc. SPIE 8909, International Symposium on Photoelectronic Detection and Imaging 2013: Terahertz Technologies and Applications, 890919 (23 August 2013); https://doi.org/10.1117/12.2034912

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KEYWORDS

Modulation

Terahertz radiation

Modulators

Semiconductor materials

Silicon

Semiconductors

Control systems

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